SAMSUNG M.2 (NGFF) PCIe Gen2 SSD 512G

• From Factor: M.2
• Interface: PCIe Gen2 5Gb/s, up to 4 lanes
• Bytes per Sector: 512 Bytes

• Supply Voltage: +3.3V ± 5%
• Voltage Ripple/Noise (max.): 100mV p-p
• Active (typical): 5.8 W
• Idle (typical): 80 mW

Data Transfer Rate(128KB)²⁾
• Sequential Read: Up to 1170 MB/s
• Sequential Write: Up to 930 MB/s

Data I/O Speed(4KB)²⁾
• Random Read (QD=32): Up to 122K IOPS
• Random Write (QD=32): Up to 72K IOPS

• Width: 22.00 ± 0.15 mm
• Length: 80.00 ± 0.15 mm
• Height: Max 3.73 mm
• Weight
  128/256GB: Max. 8g 
  512GB: Max. 8.5g

• UBER: < 1 sector per 10¹⁵ bits read
• MTBF: 1.5 Million Hours

1) 1MB = 1,000,000 Bytes, 1GB = 1,000,000,000 Bytes, Unformatted Capacity.
2) Performance measured with IOMeter. Actual performance may vary depending on
use conditions and environment.

3) Case Temperature